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Thermal Scanning Probe Lithography: Continuing the Path to Semiconductor Miniaturization

  • Published Date: 01 Mar 2019
  • Number of Pages: 11
  • Category: Industrial
  • Country: Global
Summary

New generations of electronic products, such as smartphones and wearable devices, are being confined in smaller and thinner packages and, consequently, integrated circuits (IC) are also becoming smaller in size while supporting a larger number of transistors to provide a greater number of features.

Continuing the process of miniaturization, the semiconductor industry is currently introducing integrated circuits based on transistors with 10 nm-node technology and below. A node is defined as half the distance between two identical features in adjacent transistors (also known as the IC half-pitch).

According to the latest International Technology Roadmap for Semiconductors (ITRS), issued in 2015, the target node range for logic devices reached 10-11 nanometers in 2017. These ICs are currently being fabricated by Samsung Electronics (Suwon, South Korea) and Taiwan Semiconductor Manufacturing Co. (TSMCO Hsinchu, Taiwan) using a FinFET (FinFET is the acronym for Fin Field-effect Transistor) configuration. FinFET is a non-planar (i.e., three-dimensional) field effect transistor.

The next node, which started to be mass-produced in 2018, is 7-8 nm and is likely based on a LGAA (Lateral Gate All-around) configuration. By 2021, logic devices at the 5-6 nm nodes are projected to enter the market, and by then VGAA (Vertical Gate All-around) technology will be required to manufacture these devices.

LGAA and VGAA configurations are based on the use of horizontal and vertical nanowire arrays, respectively. Nanowires for LGAA transistors are being produced using top-down methods, whereas vertical nanowires for VGAA devices are being created using bottom-up techniques.

Therefore, as companies switch to the fabrication of devices below the 10-nm node, traditional processes used in semiconductor manufacturing will be gradually replaced by fabrication methods based on the utilization of nanostructures, such as nanowires and nanofilms, as well as processes that manipulate materials at the atomic and molecular scale.
Publisher Name : BCC Research
Table of Contents
Chapter 1 Technology Highlights and Market Outlook
On-going Miniaturization and Nanoelectronics
Fabrication of Nanostructures
Scanning Probe Lithography
Current Technology Status and Strengths of Thermal Scanning Probe Lithography
Current and Emerging Applications
Technology Drawbacks
Competing Technologies
Market Outlook

List Of Tables

List of Tables
Table 1 : Deposition Technologies for Ultrathin Films, 2019
Table 2 : Lithographic Methods, 2019
Table 3 : Materials Processed, by Thermal Scanning Probe Lithography, 2019
Table 4 : Current and Emerging Applications, 2019
Table 5 : Global Market for Nanolithography Equipment, by Region, Through 2024

List Of Figures

List of Figures
Figure 1 : From Microelectronics to Nanoelectronics
Figure 2 : Global Market Share for Nanolithography Equipment, by Region, 2024

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